Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same
US7183579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Mar 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.