Dielectric reflector for amorphous silicon crystallization
US7184106B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 26, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | May 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a liquid crystal display device includes forming an amorphous silicon layer over a substrate and forming a light reflecting layer only over a first portion of the amorphous silicon layer. The amorphous silicon layer is then irradiated with a laser to convert it to a polysilicon layer. The light reflecting layer partially reflects the light away from the first portion of the amorphous silicon layer such that a first portion of the polysilicon layer has a first polysilicon grain size and a second portion of the polysilicon layer has a second polysilicon grain size, which is larger than the first polysilicon grain size. A first plurality of thin film transistors having reduced leakage current characteristics may then be formed from the first portion of the polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.