Crosspoint-type ferroelectric memory
US7184293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2004 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Apr 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A crosspoint-type ferroelectric memory is provided. In the crosspoint-type ferroelectric memory, a first memory cell array and a second memory cell array are stacked with a first interlayer insulating layer and a second interlayer insulating layer therebetween. The first memory cell array includes lower electrodes formed in stripes, upper electrodes formed in stripes in a direction that crosses the lower electrodes, ferroelectric capacitors that are disposed at least at intersecting parts of the lower electrodes and the upper electrodes, and an embedded insulating layer formed between the ferroelectric capacitors. The interlayer insulating layer includes a conductive layer between a first insulating layer and a second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.