Plasma enhanced ALD of tantalum nitride and bilayer
US7186446B2 · kind B2 · utility
6Cited by
10References
15Claims
0Family size
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Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Nov 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.