Method of forming an integrated circuit employable with a power converter

US7186606B2 · kind B2 · utility

Assignee

• Enpirion, Inc. · US

Inventors

• Ashraf W. Lotfi · Rowlett, US
• Jian Tan · Beijing, CN

Key dates

• Filing date: Aug 23, 2004
• Grant date: Mar 6, 2007
• Expiry date: Nov 13, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method of forming an integrated circuit employable with a power converter. In one embodiment, the method of forming the integrated circuit includes forming a transistor employable as a switch of a power train of the power converter by forming a gate over a semiconductor substrate. The method of forming the transistor also includes forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate, forming a heavily doped region adjacent the lightly doped region, and forming an oppositely doped well within the channel region. The method of forming the transistor further includes forming a doped region with a doping concentration profile less than the heavily doped region between the heavily doped region and the oppositely doped well. The method of forming the integrated circuit also includes forming a driver switch of a driver to provide a drive signal to the transistor.