Bipolar transistor with lattice matched base layer
US7186624B2 · kind B2 · utility
68Cited by
13References
17Claims
0Family size
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Key dates
| Filing date | Apr 14, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Apr 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.