Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body
US7187043B2 · kind B2 · utility
58Cited by
1References
3Claims
0Family size
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Key dates
| Filing date | Mar 11, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Mar 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.