Magnetoresistive device and method for manufacturing same
US7187525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2003 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Oct 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The heat resistance of a magnetic resistance device utilizing the TMR effect is improved. Also, the Neel effect of the magnetic resistance device utilizing the TMR effect is restrained. The magnetic resistance device includes a first ferromagnetic layer formed of ferromagnetic material, a non-magnetic insulative tunnel barrier layer coupled to the first ferromagnetic layer, a second ferromagnetic layer formed of ferromagnetic material and coupled to the tunnel barrier layer, and an anti-ferromagnetic layer formed of anti-ferromagnetic material. The second ferromagnetic layer is provided between the tunnel barrier layer and the anti-ferromagnetic layer. A perpendicular line from an optional position of the surface of the second ferromagnetic layer passes through at least two of the crystal grains of the second ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.