Imager having photosensitive material contains polymorphous silicon
US7189952B2 · kind B2 · utility
6Cited by
4References
38Claims
0Family size
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Key dates
| Filing date | Jun 25, 2003 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Feb 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
Abstract
Assembly of sensors formed as an imager with a detection brick including a photosensitive material, a brick for addressing and optionally processing signals from the sensor(s), an interconnection brick located between the detection brick and the addressing brick, this brick including connection pads, characterized in that the photosensitive material of the detection brick contains polymorphous silicon.The invention also relates to a method for the making of the latter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.