Semiconductor device and method for manufacturing the same
US7189997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2002 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Mar 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
A semiconductor device, comprises a first electrode, a semiconductor film, a first insulating film and a second insulating film formed between the semiconductor film and the first electrode, a second electrode, and a third insulating film formed between the semiconductor film and the second electrode. The semiconductor film is formed on a flat surface of the second insulating film. A cross portion where the first electrode and the second electrode cross the semiconductor film at the same position is formed. The first electrode and the second electrode are connected to each other through an opening made in the first insulating film and the second insulating film outside the cross portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.