Selective capping of copper wiring

US7190079B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Panayotis Andricacos · Ossining, US
• Shyng-Tsong Chen · Rensselaer, US
• John M. Cotte · New Fairfield, US
• Hariklia Deligianni · Alpine, US
• Mahadevaiyer Krishnan · Hopewell Junction, US
• Wei-Tsu Tseng · Hopewell Junction, US
• Philippe M. Vereecken · Liège, BE

Key dates

• Filing date: Nov 3, 2005
• Grant date: Mar 13, 2007
• Expiry date: Nov 3, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76883
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.