High frequency integrated circuit using capacitive bonding
US7190083B1 · kind B1 · utility
2Cited by
17References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Feb 24, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency integrated circuit includes a die, a package and capacitive bond. The die includes a circuit that processes a high frequency signal and also includes at least one bonding pad coupled to the circuit. The package includes a plurality of bonding posts, at least one of the bonding posts is allocated to the at least one bond pad of the die. A bonding capacitor couples the at least one bond pad on the die to the at least one bond post of the package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.