Polishing pad, method of producing the same, and cushion layer for polishing pad
US7192340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2001 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Jun 4, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24D11/008
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The polishing pad of this invention is a polishing pad effecting stable planarizing processing, at high polishing rate, materials requiring surface flatness at high level, such as a silicon wafer for semiconductor devices, a magnetic disk, an optical lens etc. This invention provides a polishing pad which can be subjected to surface processing to form a sheet or grooves, is excellent in thickness accuracy, attains a high polishing rate, achieves a uniform polishing rate, and also provides a polishing pad which is free of quality variations resulting from an individual variation, easily enables a change the surface patterns, enables fine surface pattern, is compatible with various materials to be polished, is free of burrs upon forming the pattern. This invention provides a polishing pad which can have abrasive grains mixed at very high density without using slurry, and generates few scratches by preventing aggregation of abrasive grains dispersed therein. The polishing pad of this invention has a polishing layer formed from a curing composition to be cured with energy rays, the polishing layer being formed surface pattern thereon by photolithography. The polishing pad of this inven…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.