Method of manufacturing nanowires and electronic device
US7192533B2 · kind B2 · utility
20Cited by
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6Claims
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Key dates
| Filing date | Mar 23, 2003 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Dec 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising a first layer of a first material and a second layer of a second material with a mutual interface, which first and second materials are different. They may be different in the doping type. Alternatively, the main constituent of the material may be different, for example SiGe or SiC versus Si, or InP versus InAs. In the resulting nanowires, the interface is atomically sharp. The electronic devices having nanowires between a first and second electrode accordingly have very good electroluminescent and optoelectronic properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.