Patent · US Expired

Thin layer of hafnium oxide and deposit process

US7192623B2 · kind B2 · utility

24Cited by
8References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 27, 2003
Grant dateMar 20, 2007
Priority date
Expiry dateDec 12, 2023

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/31678
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm3. The layer is formed by depositing on a substrate without energy input to the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.