Magneto-resistance effect element bar exposure method
US7192676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2003 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Jan 24, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49036
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides an MR element bar that permits the fabrication of MR elements in which a variation in characteristics is suppressed, as well as an MR element bar exposure method and formation method enabling the fabrication of the MR element bar. The MR element bar exposure method according to the present invention comprises the steps of: detecting the positions of a plurality of alignment marks P1 to P4 formed on a wafer W; correcting an exposure position correction region R on the basis of the positions of detected alignment marks P1′ to P4′; and exposing a resist which is formed on the wafer W, wherein an MR element bar region B comprises a plurality of MR elements (patterns MRE) aligned in the longitudinal direction of the region B, and one exposure position correction region R is established for one MR element bar region B.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.