Method of making light emitting device with silicon-containing encapsulant
US7192795B2 · kind B2 · utility
34Cited by
8References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2004 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Nov 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition consisting of a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin consists of silicon-bonded hydrogen and aliphatic unsaturation, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.