Highly selective silicon oxide etching compositions
US7192860B2 · kind B2 · utility
7Cited by
9References
23Claims
0Family size
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Key dates
| Filing date | Apr 2, 2004 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Dec 9, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0.5 to about 3 percent by solution weight of hydrofluoric acid and from about 1 to about 5 percent by solution weight of water, wherein the total concentration of bifluoride source compound is between about 1.25 and about 5.0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.