Method for texturing surfaces of silicon wafers

US7192885B2 · kind B2 · utility

Assignee

• University of Konstanz · DE

Inventors

• Alexander Hauser · Hanau, DE
• Ihor Melnyk · Horlivka, UA
• Peter Fath · Ilsenburg, DE

Key dates

• Filing date: Apr 22, 2004
• Grant date: Mar 20, 2007
• Expiry date: Apr 22, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution. The etching solution comprises, in percent, 20% to 55% water, 10% to 40% concentrated hydrofluoric acid and 20% to 60% concentrated nitric acid and the temperature of the etching solution is between 0 and 15 degrees Celsius.