Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics
US7192886B2 · kind B2 · utility
3Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2003 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Apr 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the caustic etching of silicon which is of importance for the semiconductor industry and silicon wafer manufacture in particular, that includes using one or more iodate or chlorite salts as additives in the etching process to achieve improved surface conditions, such as smaller facets and lower roughness, on the resulting silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.