Nitride semiconductor device
US7193246B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1999 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Mar 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.