Light-emitting element having PNPN-structure and light-emitting element array
US7193250B2 · kind B2 · utility
5Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 21, 2003 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Feb 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A light-emitting element including a light-emitting thyristor and a schottky barrier diode is provided. A schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0 V by using such a schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.