Production apparatus for producing gallium nitride semiconductor film and cleaning apparatus for exhaust gas
US7195022B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 16, 2005 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Mar 16, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01D2258/0216
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.