Radiation emitting semiconductor device

US7195942B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Dominik Eisert · Regensberg, DE
• Volker Haerle · Waldetzenberg, DE
• Frank Kuehn · Birkenfeld, DE
• Manfred Mundbrod-Vangerow · Oxenbronn, DE
• Uwe Strauss · Bad Abbach, DE
• Ulrich Zehnder · Regensburg, DE

Key dates

• Filing date: May 3, 2004
• Grant date: Mar 27, 2007
• Expiry date: Dec 5, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/856

Abstract

Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device.A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion (20b) that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer (20) encompassing the second side wall portion (20b) forms a mounting pedestal for the semiconductor device. The first and second side wall port…