Minimizing the effect of 1/ƒ noise with a MEMS flux concentrator
US7195945B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2005 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Sep 15, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/095
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of fabricating a MEMS device includes forming a magnetic sensor over a SOI wafer which may include an epoxy layer; forming a pair of MEMS flux concentrators sandwiching the magnetic sensor; connecting an electrostatic comb drive to each of the flux concentrators; connecting a spring to the flux concentrators and the comb drive; performing a plurality of DRIE processes on the SOI wafer; and releasing the flux concentrators, the comb drive, and the spring from the SOI wafer. Another embodiment includes forming adhesive bumps and a magnetic sensor on a first wafer; forming a second wafer; forming a pair of MEMS flux concentrators, a pair of electrostatic comb drives, and at least one spring on the second wafer; bonding the second wafer to the adhesive bumps; and compressing the adhesive bumps using non-thermal means such as pressure only.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.