Thyristor-based semiconductor device and method of fabrication
US7195959B1 · kind B1 · utility
31Cited by
25References
24Claims
0Family size
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Key dates
| Filing date | Oct 4, 2004 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Oct 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A thyristor-based semiconductor memory device may comprise at least a region thereof, e.g., a p-base region, having high ionization energy impurity, such as a dopant. This high ionization energy impurity within a base region may be operable to compensate for a gain-versus-temperature dependence of a constituent bipolar transistor of the thyristor element of a thyristor-based memory device. In particular embodiments, the high ionization energy impurity may include a donor and/or acceptor in silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.