Method of forming an integrated circuit employable with a power converter
US7195981B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2004 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Aug 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method of forming an integrated circuit employable with a power converter. In one embodiment, the method of forming the integrated circuit includes forming a power switch of a power train of the power converter on a semiconductor substrate, and forming a driver switch of a driver configured to provide a drive signal to the power switch and embodied in a transistor. The method of forming the transistor includes forming a gate over the semiconductor substrate, and forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate and forming a heavily doped region adjacent the lightly doped region. The method of forming the transistor further includes forming an oppositely doped well within the channel region, and forming a doped region with a doping concentration profile less than the heavily doped region between the heavily doped region and the oppositely doped well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.