Patent · US Expired

Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip

US7195991B2 · kind B2 · utility

9Cited by

5References

11Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Christian Karnutsch · Karlsruhe, DE
Peter Stauss · Regensburg, DE
Klaus Streubel · Hemau, DE

Key dates

Filing date	Aug 21, 2003
Grant date	Mar 27, 2007
Priority date	—
Expiry date	Sep 9, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/0133
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Gax(InyAl1−y)1−xP wherein 0.8≦x and 0≦y≦1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.