Semiconductor etching paste and the use thereof for localized etching of semiconductor substrates
US7196018B2 · kind B2 · utility
24Cited by
17References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2003 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Dec 28, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method of etching a semiconductor substrate is described, the method comprising the steps of applying a paste containing an etchant to the substrate, and carrying out a thermal processing step to etch a part or a layer of the substrate where the paste has been applied. The etchant paste is preferably a caustic etching paste. The etchant paste may be applied selectively to a major surface of the substrate to form a pattern of applied paste. For example, the paste may be applied by a printing method, such as screen-printing. The method may be used to produce solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.