Method of manufacturing a low expansion material and semiconductor device using the low expansion material
US7196417B2 · kind B2 · utility
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6References
2Claims
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Key dates
| Filing date | Jul 23, 2003 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Mar 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/32225
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A mold is filled with unsintered SiC particles and a melt of Al or of an Al alloy containing Si is poured into the mold for high pressure casting. Owing to the SiC particles and Si precipitated upon casting, a low expansion material having a low thermal expansion coefficient is produced. A heat transmission path is formed by Al infiltrating spaces between the SiC particles and therefore high heat conductivity is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.