Emissive flat panel display having electron sources with high current density and low electric field strength
US7196463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2004 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Jan 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30469
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides an emissive flat panel display device which is capable of performing a gate operation at a relatively low voltage of several V to several tens V using gate electrodes. In the emissive flat panel display device which includes a back panel which is constituted of a back substrate on which cathode electrodes having electron sources formed of carbon nanotubes and gate electrodes are formed, a face panel which forms phosphors and anode electrodes thereon, and a sealing frame which seals the back panel and the face panel, the difference between an electric field strength Emax for allowing the electron sources to obtain the required maximum emission current density and an electric field strength Emin which becomes the minimum emission current density is set to 1V/μm or less, and preferably 0.5V/μm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.