Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
US7196875B2 · kind B2 · utility
1Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2004 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Apr 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A permalloy sensor having high sensitivity is presented A substrate and a sensor has a first surface having a wafer level anisotropy in a given direction. A permalloy resistor pattern of individual runners is deposited on the surface such that the mechanical length of each of said individual runners is perpendicular to the wafer level anisotropy to cause the sensor to have an anisotropy of about 90°. The permalloy is deposited as a thin film and a silicon wafer is the preferred substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.