Magnetoresistive element, magnetoresistive head and magnetic reproducing apparatus
US7196877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2003 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Jun 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/30
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer, a magnetization free layer, and a nonmagnetic intermediate layer. A magnetization direction of the magnetization pinned layer is substantially fixed in an external magnetic field, a magnetization direction of the magnetization free layer is configured to change in the external magnetic field, and the nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer and has a stacked structure of a first non-metallic intermediate layer/a metal intermediate layer/a second non-metallic intermediate layer. The magnetoresistive element also includes a pair of electrodes coupled to the magnetoresistive film and is configured to provide a current in a direction substantially perpendicular to a surface of the magnetoresistive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.