Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip
US7196878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2004 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Jun 22, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/1272
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin valve (SV) sensor of the self-pinned type includes one or more compressive stress modification layers for reducing the likelihood that the pinning field will flip its direction. The spin valve sensor includes a capping layer formed over a spin valve structure which includes a free layer, an antiparallel (AP) self-pinned layer structure, and a spacer layer in between the free layer and the AP self-pinned layer structure. A compressive stress modification layer is formed above or below the capping layer, adjacent the AP self-pinned layer structure, or both. Preferably, the compressive stress modification layer is made of ruthenium (Ru) or other suitable material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.