Zener triggered overvoltage protection device
US7196889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | May 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
An overvoltage protection device is formed in a semiconductor substrate having a plurality of doped regions for forming semiconductor devices. The overvoltage protection device is adapted to draw current away from a device to be protected from excess voltage and has a switchable device having a terminal adapted to be coupled to a potential source of excess voltage and to the semiconductor substrate for drawing current away from the potential source of excess voltage when the switchable device is triggered, and for directing the current to the semiconductor substrate.A Zener diode is coupled to a second terminal of the switchable device to trigger the switchable device to a conducting state. The Zener diode is formed in the same doped region of the substrate as the trigger of the switchable device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.