Field effect transistor and method of manufacturing the same
US7199014B2 · kind B2 · utility
5Cited by
2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 1, 2004 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Apr 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4735
Abstract
There is provided a field effect transistor which is suitable for a power amplifier application or the like, and have a double recess structure with superior repeatability. A film thickness of an AlGaAs layer can determine a depth of a second step of a recess uniquely by using the AlGaAs layer and an InGaP layer with a higher etching selection ratio, a double recess structure can be formed with desirable repeatability, and a high withstand voltage device suitable for a power amplifier application or the like is achieved by making both side surfaces of a gate electrode into the AlGaAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.