Low profile wire bond for an electron sensing device in an image intensifier tube
US7199345B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2004 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Apr 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10155
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron sensing device for receiving electrons from an output surface of an electron gain device has a silicon die including an active surface area for positioning below the output surface of an electron gain device. The silicon die also includes a silicon step formed below and surrounding the active surface area, and a first array of bond pads formed on the silicon step for providing output signals from the silicon die. When the electron sensing device is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.