Pixel structure with improved charge transfer
US7199410B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 13, 2000 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Feb 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers from the source as they are generated. At least one doped or inverted region of a first conductivity is provided in or on the substrate for storing the carriers before read-out. At least one non-carrier storing, planar current flow, carrier transport pathway is provided from or through the carrier collecting region to the at least one doped or inverted region to transfer the carriers without intermediate storage to the read-out electronics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.