Systems and methods for filling voids and improving properties of porous thin films
US7201022B2 · kind B2 · utility
1Cited by
7References
6Claims
0Family size
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Key dates
| Filing date | Jun 17, 2005 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Jun 17, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249987
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of reducing the intrusions or migrations of photolithography materials by introducing a sol-gel layer onto a porous thin film prior to applying the photolithography/photoresist material layer. Curing the sol-gel layer results in the sol-gel layer merging or unifying with the underlying porous thin film layer so that the combined sol-gel/thin layer exhibits substantially the same properties as the untreated porous thin film layer before the sol-gel was applied. As a result, a greater etching accuracy is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.