Method for removing defects from silicon bodies by a selective etching process

US7201852B1 · kind B1 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Richard Spitz · Reutlingen, DE
• Helga Uebbing · Reutlingen, DE
• Doerte Eimers-Klose · Reutlingen, DE
• Franz Laermer · Stuttgart, DE
• Andrea Schilp · Schwäbisch Gmünd, DE

Key dates

• Filing date: Apr 26, 2000
• Grant date: Apr 10, 2007
• Expiry date: Dec 29, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/306
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching medium that etches silicon selectively in a chemical reaction, and gaseous reaction products are produced during etching. An interhalogen or fluorine-noble gas compound that is in a gaseous state or was converted to the gaseous phase may be used as the etching medium. The method is believed to be suitable for producing power diodes sawn from a wafer or for overetching fully mounted individual diodes.