Semiconductor luminescent device and manufacturing method thereof
US7202510B2 · kind B2 · utility
1Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Oct 13, 2005 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Oct 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.