Multiple gate semiconductor device and method for forming same
US7202517B2 · kind B2 · utility
286Cited by
4References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 16, 2004 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Mar 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/314
Abstract
A multiple gate semiconductor device. The device includes at least two gates. The dopant distribution in the semiconductor body of the device varies from a low value near the surface of the body towards a higher value inside the body of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.