Self gating photosurface
US7202898B1 · kind B1 · utility
352Cited by
10References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1998 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Dec 16, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B7/32
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor surface is provided comprising a plurality of light sensitive pixels wherein each pixel of the plurality of pixels comprises an electronic circuit formed on or in the semiconductor surface, the circuit comprising: a photosensor that generates a signal responsive to light incident thereon at an output thereof; and circuitry that provides a signal responsive to a time lapse between a first time responsive to said signal and a reference time. There is also provided a 3D camera incorporating the semiconductor surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.