Polishing composition
US7204865B2 · kind B2 · utility
10Cited by
5References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 3, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Jan 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a polishing composition that can be preferably used to polish a silicon wafer. The polishing composition includes a block polyether represented by the chemical formula HO—(EO)a—(PO)b—(EO)c—H, wherein EO represents an oxyethylene group, PO represents an oxypropylene group, each of a and c represents the polymerization degree of ethylene oxide, b represents the polymerization degree of propylene oxide, and each of a, b, and c is an integer of 1 or greater; silicon dioxide; a basic compound; at least either one of hydroxyethyl cellulose and polyvinyl alcohol; and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.