Method of etching a metallic film on a substrate
US7204935B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | May 4, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Jul 6, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/111
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent such that the rate of etching can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the oxidizing and reducing agents, and the number of etching phases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.