Patent · US Expired

Multilayer elements containing photoresist compositions and their use in microlithography

US7205086B2 · kind B2 · utility

2Cited by
7References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 26, 2001
Grant dateApr 17, 2007
Priority date
Expiry dateAug 25, 2022

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/111
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photoresist element comprising a substrate; an etch resistant layer; and at least one photoresist layer prepared from a photoresist composition comprising a polymer selected from the group consisting of: (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: —C(Rf)(Rf′)OH, wherein Rf and Rf′ are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is 2 to 10; (d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole) or CX2═CY2 where X═F or CF3 and Y═—H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CX2═CY2; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; and (B) at least one photoactive component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.