Surface MEMS mirrors with oxide spacers
US7205176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Jan 18, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B26/0833
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An MEMS mirror structure is formed using an etching process that forms sidewall oxide spacers while maintaining the integrity of the oxide layer formed over the reflective layer of the MEMS mirror structure. The discrete mirror structure is formed to include a reflective layer sandwiched between oxide layers and with a protect layer formed over the upper oxide layer. A spacer oxide layer is formed to cover the structure and oxide spacers are formed on sidewalls of the discrete structure using a selective etch process that is terminated when horizontal portions of the spacer oxide layer have cleared to expose the release layer formed below the discrete mirror structure and the protect layer. The superjacent protect layer prevents the spacer oxide etch process from attacking the upper oxide layer and therefore maintains the integrity of the upper oxide layer and the functionality of the mirror structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.