Solid state image pickup apparatus and radiation image pickup apparatus
US7205568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Mar 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.