Semiconductor component which emits radiation, and method for producing the same

US7205578B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Dominik Eisert · Regensberg, DE
• Volker Harle · Hemau, DE
• Frank Kuhn · Munich, DE
• Manfred Mundbrod-Vangerow · Oxenbronn, DE
• Uwe Strauss · Bad Abbach, DE
• Jacob Ulrich · Regensburg, DE
• Ernst Nirschl · Wenzenbach, DE
• Norbert Linder · Wenzenbach, DE
• Reinhard Sedlmeier · Neutraubling, DE
• Ulrich Zehnder · Regensburg, DE
• Johannes Baur · Regensburg, DE

Key dates

• Filing date: Feb 15, 2001
• Grant date: Apr 17, 2007
• Expiry date: Feb 15, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2) and a second principal face (3) opposite the first principal face (2), and whose first principal face (2) adjoins the multilayered structure (4).At least one recess (8) is made in the window (1), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window (1) or of the recess (8) is provided at least partially with a contact surface (11). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings (14).