Method of forming interlayer connections in integrated optical circuits, and devices formed using same
US7206480B2 · kind B2 · utility
1Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2003 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Apr 3, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/12002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and system of forming vertical optical interconnects in optical integrated circuits is disclosed. The method includes forming a first optical transmission layer over a substrate. A first cladding layer is then formed on the first optical transmission layer and portions of the first cladding layer removed to form an angled sidewall in the first cladding layer. An optical interconnect layer is formed on the angled sidewall of the first cladding layer and on an exposed portion of the first optical transmission layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.